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this is information on a product in full production. february 2013 doc id 18206 rev 2 1/21 21 STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 n-channel 525 v, 2.5 a, 2.1 typ., supermesh3? power mosfet in dpak, to-220fp, to-220 and ipak packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected application switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d pw STD4N52K3 stf4n52k3 stp4n52k3 stu4n52k3 525 v < 2.6 2.5 a 2.5 a 2.5 a (1) 2.5 a 1. limited by package 45 w 20 w 45 w 45 w 1 2 3 1 3 to-220 dpak to-220fp ipak 1 2 3 3 2 1 d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STD4N52K3 4n52k3 dpak tape and reel stf4n52k3 4n52k3 to-220fp tube stp4n52k3 4n52k3 to-220 tube stu4n52k3 4n52k3 ipak tube www.st.com
contents STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 2/21 doc id 18206 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 electrical ratings doc id 18206 rev 2 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 dpak ipak to-220fp v ds drain-source voltage (v gs = 0) 525 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2.5 2.5 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 2 2 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 10 10 (1) a p tot total dissipation at t c = 25 c 45 20 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 1.3 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 110 mj dv/dt (3) 3. i sd 2.5 a, di/dt = 400 a/ s, peak v dd v (br)dss , v dd = 80% v (br)dss. peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 dpak ipak to-220fp r thj-case thermal resistance junction-case max 2.78 6.25 c/w r thj-pcb (1) 1. when mounted on 1inch sq fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 62.5 c/w t l maximum lead temperature for soldering purpose 300 300 c
electrical characteristics STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 4/21 doc id 18206 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 525 v i dss zero gate voltage drain current (v gs = 0) v ds = 525 v v ds = 525 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on- resistance v gs = 10 v, i d = 1.25 a 2.1 2.6 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 334 28 5 - pf pf pf c oss(eq) (1) 1. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance time related v ds = 0 to 420 v, v gs = 0 - 20 - pf r g intrinsic gate resistance f = 1 mhz open drain - 4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 2.5 a, v gs = 10 v (see figure 19 ) - 11 2 7 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 260 v, i d = 1.25 a, r g = 4.7 , v gs = 10 v (see figure 18 ) - 8 7 21 14 - ns ns ns ns
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 electrical characteristics doc id 18206 rev 2 5/21 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 2.5 10 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2.5 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.5 a, di/dt = 100 a/ s v dd = 60 v (see figure 23 ) - 173 778 9 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.5 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 23 ) - 196 941 10 ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the z ener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s in tegrity. these integrated zener diodes thus avoid the usage of external components gate-source breakdown voltage igs= 1 ma (open drain) 30 - v
electrical characteristics STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 6/21 doc id 18206 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for dpak, ipak figure 7. thermal impedance for dpak, ipak i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am08637v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am08638v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am08639v1
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 electrical characteristics doc id 18206 rev 2 7/21 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized b vdss vs temperature figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. gate charge vs gate-source voltage i d 3 2 1 0 0 10 v ds (v) 20 (a) 5 15 25 4 5 5v 6v 7v v gs =10v 6 am08640v1 i d 1.5 1.0 0.5 0 0 4 v gs (v) 8 (a) 2 6 2.0 2.5 3.0 3.5 4.0 4.5 1 3 5 7 9 v gs =15v am08641v1 bv dss -75 t j (c) (norm) -25 75 25 125 0.80 0.85 0.90 0.95 1.00 1.05 1.10 am08648v1 r ds(on) 2.05 1.95 1.85 1.75 0 1.0 i d (a) ( ) 0.5 1.5 2.15 2.25 2.35 v gs =10v 2.0 2.5 am08643v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am00893v1 v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =420v i d =2.5a 10 12 300 200 100 0 350 400 v ds v gs 12 150 250 50 am08642v1
electrical characteristics STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 8/21 doc id 18206 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. maximum avalanche energy vs starting tj v gs(th) 0.8 0.7 0.6 0.5 -75 t j (c) (norm) -25 0.9 75 25 125 1.0 1.1 am08646v1 r ds(on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 0 2.5 am08647v1 v sd 0 1 i sd (a) (v) 0.5 2.5 1.5 2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =-50c t j =150c t j =25c am08649v1 e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 120 140 80 100 120 i d =2.5 a v dd =50 v am08650v1
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 test circuits doc id 18206 rev 2 9/21 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 10/21 doc id 18206 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 package mechanical data doc id 18206 rev 2 11/21 figure 24. dpak (to-252) drawing figure 25. dpak footprint (a) a. all dimensions are in millimeters 0068772_i 6.7 1.6 1.6 2.3 2.3 6.7 1.8 3 am08850v1
package mechanical data STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 12/21 doc id 18206 rev 2 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 package mechanical data doc id 18206 rev 2 13/21 figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 14/21 doc id 18206 rev 2 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 package mechanical data doc id 18206 rev 2 15/21 figure 27. to-220 type a drawing 0015988_typea_rev_s
package mechanical data STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 16/21 doc id 18206 rev 2 table 12. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 package mechanical data doc id 18206 rev 2 17/21 figure 28. ipak (to-251) drawing 0068771_j
packaging mechanical data STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 18/21 doc id 18206 rev 2 5 packaging mechanical data table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 packaging mechanical data doc id 18206 rev 2 19/21 figure 29. tape for dpak (to-252) figure 30. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 20/21 doc id 18206 rev 2 6 revision history table 14. document revision history date revision changes 09-nov-2010 1 first release. 19-feb-2013 2 updated packages order in table 1: device summary . updated table 4: package mechanical data and table 5: packaging mechanical data . minor text changes on the cover page.
STD4N52K3, stf4n52k3, stp4n52k3, stu4n52k3 doc id 18206 rev 2 21/21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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